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Infineon Technologies IPA60R360P7XKSA1
MOSFET N-CHANNEL 650V 9A TO220
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 1.54
- Stock
- 103
Product Details
- FET Type
- N-Channel
- Supplier Device Package
- ITO-220AB
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 9.7nC @ 10V
- Vgs (Max)
- ±30V
- Drain to Source Voltage (Vdss)
- 600V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 480pF @ 100V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 4.5A (Tc)
- Part Status
- Not For New Designs
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3 Full Pack, Isolated Tab
- Vgs(th) (Max) @ Id
- 4V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 900mOhm @ 2.3A, 10V
- Series
- -
- Power Dissipation (Max)
- 50W (Tc)