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Infineon Technologies IMW120R220M1HXKSA1
COOLSIC MOSFETS 1200V
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 10.74
- Stock
- 0
Product Details
- Technology
- SiC (Silicon Carbide Junction Transistor)
- Input Capacitance (Ciss) (Max) @ Vds
- 300pF @ 1000V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 9.4A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 20V
- Mounting Type
- Through Hole
- Package / Case
- TO-247-3
- Vgs(th) (Max) @ Id
- 2.8V @ 1mA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 350mOhm @ 5A, 20V
- Power Dissipation (Max)
- 55W (Tc)
- Series
- -
- Supplier Device Package
- TO-247-3
- FET Type
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 20nC @ 20V
- Vgs (Max)
- +25V, -10V
- Drain to Source Voltage (Vdss)
- 1.2kV