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Infineon Technologies IGT60R190D1SATMA1
IC GAN FET 600V 23A 8HSOF
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0
- Stock
- 490
Product Details
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 4820pF @ 400V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 75A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerSFN
- Vgs(th) (Max) @ Id
- 4V @ 1.44mA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 28mOhm @ 28.8A, 10V
- Series
- CoolMOS™ G7
- Power Dissipation (Max)
- 391W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- PG-HSOF-8-2
- Packaging
- Cut Tape (CT)
- Gate Charge (Qg) (Max) @ Vgs
- 123nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 600V