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Infineon Technologies IGT60R070D1ATMA1
IC GAN FET 600V 60A 8HSOF
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0
- Stock
- 599
Product Details
- Technology
- GaNFET (Gallium Nitride)
- Current - Continuous Drain (Id) @ 25°C
- 31A (Tc)
- FET Feature
- -
- Drive Voltage (Max Rds On, Min Rds On)
- -
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- 20-PowerSOIC (0.433", 11.00mm Width)
- Vgs(th) (Max) @ Id
- 1.6V @ 2.6mA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- -
- Series
- CoolGaN™
- Power Dissipation (Max)
- 125W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- PG-DSO-20-85
- Packaging
- Digi-Reel®
- Drain to Source Voltage (Vdss)
- 600V
- Vgs (Max)
- -10V
- Input Capacitance (Ciss) (Max) @ Vds
- 380pF @ 400V