Infineon Technologies IAUT200N08S5N023ATMA1

Product Details

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

1500pF @ 400V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

19A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Surface Mount

Package / Case

TO-263-4, D²Pak (3 Leads + Tab), TO-263AA

Vgs(th) (Max) @ Id

4V @ 390µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

120mOhm @ 7.8A, 10V

Series

CoolMOS™ C7

Power Dissipation (Max)

92W (Tc)

FET Type

N-Channel

Supplier Device Package

PG-TO263-3

Packaging

Tape & Reel (TR)

Gate Charge (Qg) (Max) @ Vgs

34nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

650V