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Infineon Technologies BUZ32 H
MOSFET N-CH 200V 9.5A TO220-3
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 1.07
- Stock
- 96
Product Details
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 10nC @ 5V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 60V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 570pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 12A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 5V
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Vgs(th) (Max) @ Id
- 2V @ 250µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 180mOhm @ 6A, 5V
- Series
- -
- Power Dissipation (Max)
- 3.9W (Ta), 48W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-252-3