Infineon Technologies BTS282Z E3230

Product Details

FET Type

N-Channel

Supplier Device Package

D²PAK (TO-263AB)

Packaging

Tape & Reel (TR)

Drain to Source Voltage (Vdss)

200V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1900pF @ 25V

Technology

MOSFET (Metal Oxide)

Current - Continuous Drain (Id) @ 25°C

21A (Tc)

FET Feature

-

Drive Voltage (Max Rds On, Min Rds On)

10V

Part Status

Obsolete

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Vgs(th) (Max) @ Id

4V @ 1mA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

130mOhm @ 13.5A, 10V

Series

SIPMOS®

Power Dissipation (Max)

125W (Tc)