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Infineon Technologies BSZ520N15NS3GATMA1
MOSFET N-CH 150V 21A 8-TSDSON
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0
- Stock
- 46990
Product Details
- Series
- NexFET™
- Power Dissipation (Max)
- 2.8W (Ta), 83W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- 8-VSON (3.3x3.3)
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 21nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 100V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 1680pF @ 50V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 50A (Ta)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 6V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerVDFN
- Vgs(th) (Max) @ Id
- 3.6V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 14.5mOhm @ 10A, 10V