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Infineon Technologies BSZ180P03NS3EGATMA1
MOSFET P-CH 30V 39.6A TSDSON-8
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0
- Stock
- 4107
Product Details
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 30V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 1710pF @ 10V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 16A (Ta), 57A (Tc)
- Part Status
- Not For New Designs
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerTDFN
- Vgs(th) (Max) @ Id
- 2.2V @ 25µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 6.1mOhm @ 20A, 10V
- Series
- HEXFET®
- Power Dissipation (Max)
- 2.6W (Ta), 33W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- PQFN (3x3)
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 26nC @ 10V