Infineon Technologies BSZ165N04NSGATMA1

Product Details

Package / Case

TO-261-4, TO-261AA

Vgs(th) (Max) @ Id

2.3V @ 94µA

Operating Temperature

-55°C ~ 150°C (TJ)

Power Dissipation (Max)

1.8W (Ta)

Series

SIPMOS™

Supplier Device Package

PG-SOT223-4

FET Type

N-Channel

Gate Charge (Qg) (Max) @ Vgs

6.6nC @ 10V

Packaging

Digi-Reel®

Drain to Source Voltage (Vdss)

600V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

150pF @ 25V

Technology

MOSFET (Metal Oxide)

Current - Continuous Drain (Id) @ 25°C

120mA (Ta)

FET Feature

-

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Part Status

Active

Mounting Type

Surface Mount