Infineon Technologies BSZ100N03LSGATMA1

Product Details

FET Type

P-Channel

Supplier Device Package

8-SO

Packaging

Tape & Reel (TR)

Gate Charge (Qg) (Max) @ Vgs

52nC @ 10V

Vgs (Max)

±25V

Drain to Source Voltage (Vdss)

30V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

1680pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

12A (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V, 20V

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Vgs(th) (Max) @ Id

2.4V @ 25µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

8.5mOhm @ 12A, 20V

Series

HEXFET®

Power Dissipation (Max)

2.5W (Ta)