Infineon Technologies BSZ058N03LSGATMA1

Product Details

Packaging

Cut Tape (CT)

Gate Charge (Qg) (Max) @ Vgs

68nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

40V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

2110pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

56A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs(th) (Max) @ Id

3.9V @ 50µA

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

5.1mOhm @ 55A, 10V

Series

HEXFET®, StrongIRFET™

Power Dissipation (Max)

83W (Tc)

FET Type

N-Channel

Supplier Device Package

TO-252, (D-Pak)