Infineon Technologies BSZ025N04LSATMA1

Product Details

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Mounting Type

Surface Mount

Package / Case

8-TQFN Exposed Pad

Vgs(th) (Max) @ Id

3.9V @ 100µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

3.3mOhm @ 50A, 10V

Series

HEXFET®, StrongIRFET™

Power Dissipation (Max)

78W (Tc)

FET Type

N-Channel

Supplier Device Package

8-PQFN (5x6)

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

98nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

40V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

3174pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

85A (Tc)