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Infineon Technologies BSC889N03MSGATMA1
MOSFET N-CH 30V 44A TDSON-8
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Series
- OptiMOS™
- Power Dissipation (Max)
- 2.2W (Ta), 38W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- MG-WDSON-2, CanPAK M™
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 46nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 60V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 3700pF @ 30V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 13A (Ta), 56A (Tc)
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Surface Mount
- Package / Case
- 3-WDSON
- Vgs(th) (Max) @ Id
- 4V @ 33µA
- Operating Temperature
- -40°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 7.7mOhm @ 30A, 10V