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Infineon Technologies BSC883N03LSGATMA1
MOSFET N-CH 34V 17A TDSON-8
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Vgs(th) (Max) @ Id
- 2.4V @ 300µA
- Operating Temperature
- 175°C
- Rds On (Max) @ Id, Vgs
- 2.8mOhm @ 40A, 10V
- Power Dissipation (Max)
- 2.67W (Ta), 104W (Tc)
- Series
- U-MOSIX-H
- Supplier Device Package
- 8-TSON Advance (3.3x3.3)
- FET Type
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 39nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 45V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 3.2nF @ 22.5V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 139A (Ta), 80A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerVDFN