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Infineon Technologies BSC0906NSATMA1
MOSFET N-CH 30V 18A 8TDSON
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0
- Stock
- 7939
Product Details
- Mounting Type
- Surface Mount
- Package / Case
- 6-UFBGA, WLCSP
- Vgs(th) (Max) @ Id
- 1.5V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 90mOhm @ 1A, 4.5V
- Series
- PowerTrench®
- Power Dissipation (Max)
- 1.9W (Ta)
- FET Type
- P-Channel
- Supplier Device Package
- 6-WLCSP (1.0x1.5)
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 10nC @ 10V
- Vgs (Max)
- ±12V
- Drain to Source Voltage (Vdss)
- 20V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 660pF @ 10V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 3A (Ta)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 1.7V, 4.5V