Infineon Technologies BSC0902NSIATMA1

Product Details

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

100V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

1800pF @ 50V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

43A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs(th) (Max) @ Id

3.5V @ 33µA

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

18mOhm @ 33A, 10V

Series

OptiMOS™

Power Dissipation (Max)

71W (Tc)

FET Type

N-Channel

Supplier Device Package

PG-TO252-3

Packaging

Tape & Reel (TR)

Gate Charge (Qg) (Max) @ Vgs

25nC @ 10V