Infineon Technologies BSC059N04LS6ATMA1

Product Details

Series

-

Power Dissipation (Max)

3.61W (Ta), 79W (Tc)

FET Type

N-Channel

Supplier Device Package

5-DFN (5x6) (8-SOFL)

Packaging

Cut Tape (CT)

Gate Charge (Qg) (Max) @ Vgs

30nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

30V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

1972pF @ 15V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

24.7A (Ta), 116A (Tc)

Part Status

Not For New Designs

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount

Package / Case

8-PowerTDFN

Vgs(th) (Max) @ Id

2.2V @ 250µA

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

3.4mOhm @ 30A, 10V