Infineon Technologies BSC042N03MSGATMA1

Product Details

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

8676pF @ 10V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

16A (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Vgs(th) (Max) @ Id

900mV @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

7mOhm @ 16A, 4.5V

Series

HEXFET®

Power Dissipation (Max)

2.5W (Ta)

FET Type

P-Channel

Supplier Device Package

8-SO

Packaging

Cut Tape (CT)

Gate Charge (Qg) (Max) @ Vgs

91nC @ 4.5V

Vgs (Max)

±8V

Drain to Source Voltage (Vdss)

12V