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Infineon Technologies BSC024NE2LSATMA1
MOSFET N-CH 25V 25A TDSON-8
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0
- Stock
- 1234
Product Details
- Vgs(th) (Max) @ Id
- 700mV @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 40mOhm @ 3.2A, 4.5V
- Series
- HEXFET®
- Power Dissipation (Max)
- 2.5W (Ta)
- FET Type
- P-Channel
- Supplier Device Package
- 8-SO
- Packaging
- Cut Tape (CT)
- Gate Charge (Qg) (Max) @ Vgs
- 50nC @ 4.5V
- Vgs (Max)
- ±12V
- Drain to Source Voltage (Vdss)
- 20V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 1500pF @ 15V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 6.7A (Ta)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 2.7V, 4.5V
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154", 3.90mm Width)