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Infineon Technologies BSC019N04NSGATMA1
MOSFET N-CH 40V 100A TDSON-8
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0
- Stock
- 3830
Product Details
- FET Type
- N-Channel
- Supplier Device Package
- PG-TSDSON-8
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 27nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 120V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 1900pF @ 60V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 37A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerTDFN
- Vgs(th) (Max) @ Id
- 4V @ 35µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 24mOhm @ 20A, 10V
- Series
- OptiMOS™
- Power Dissipation (Max)
- 66W (Tc)