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Infineon Technologies BSC016N06NSTATMA1
DIFFERENTIATED MOSFETS
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0
- Stock
- 14632
Product Details
- Rds On (Max) @ Id, Vgs
- 11mOhm @ 13.4A, 10V
- Series
- HEXFET®
- Power Dissipation (Max)
- 3.6W (Ta), 89W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- DIRECTFET™ MZ
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 36nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 60V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 1350pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 13.4A (Ta), 67A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Surface Mount
- Package / Case
- DirectFET™ Isometric MZ
- Vgs(th) (Max) @ Id
- 4.9V @ 100µA
- Operating Temperature
- -40°C ~ 150°C (TJ)