Infineon Technologies BSC012N06NSATMA1

Product Details

Package / Case

DirectFET™ Isometric L8

Vgs(th) (Max) @ Id

5V @ 250µA

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

38mOhm @ 21A, 10V

Series

HEXFET®

Power Dissipation (Max)

4.3W (Ta), 125W (Tc)

FET Type

N-Channel

Supplier Device Package

DIRECTFET L8

Packaging

Tape & Reel (TR)

Gate Charge (Qg) (Max) @ Vgs

165nC @ 10V

Vgs (Max)

±30V

Drain to Source Voltage (Vdss)

250V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

6714pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

375A (Tc)

Part Status

Obsolete

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Surface Mount