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Infineon Technologies BSC011N03LSTATMA1

DIFFERENTIATED MOSFETS

Manufacturer
Infineon Technologies
Datasheet
Price
2.2
Stock
4880

Product Details

Base Part Number
IRFN8403
Vgs(th) (Max) @ Id
3.9V @ 100µA
Operating Temperature
-55°C ~ 175°C (TJ)
Series
HEXFET®
Rds On (Max) @ Id, Vgs
3.3mOhm @ 50A, 10V
FET Type
N-Channel
Power Dissipation (Max)
4.3W (Ta), 94W (Tc)
Packaging
Digi-Reel®
Supplier Device Package
8-PQFN (5x6)
Vgs (Max)
±20V
Gate Charge (Qg) (Max) @ Vgs
98nC @ 10V
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40V
FET Feature
-
Input Capacitance (Ciss) (Max) @ Vds
3174pF @ 25V
Part Status
Discontinued at Digi-Key
Current - Continuous Drain (Id) @ 25°C
95A (Tc)
Mounting Type
Surface Mount
Drive Voltage (Max Rds On, Min Rds On)
10V
Package / Case
8-PowerTDFN