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Infineon Technologies BSB013NE2LXIXUMA1
MOSFET N-CH 25V 163A WDSON-2
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 1.82
- Stock
- 5000
Product Details
- Series
- CoolMOS™
- Power Dissipation (Max)
- 83W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- PG-TO252-3-1
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 32nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 500V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 750pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 7.6A (Tc)
- Part Status
- Not For New Designs
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Vgs(th) (Max) @ Id
- 3.9V @ 350µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 600mOhm @ 4.6A, 10V