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Infineon Technologies AUIRF7379Q

MOSFET N/P-CH 30V 5.8A 8SOIC

Manufacturer
Infineon Technologies
Datasheet
Price
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Stock
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Product Details

Series
HEXFET®
Gate Charge (Qg) (Max) @ Vgs
14nC @ 10V
FET Type
N and P-Channel
Drain to Source Voltage (Vdss)
30V
Packaging
Tube
Input Capacitance (Ciss) (Max) @ Vds
190pF @ 15V
FET Feature
Logic Level Gate
Current - Continuous Drain (Id) @ 25°C
3.5A, 2.3A
Part Status
Obsolete
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Vgs(th) (Max) @ Id
3V @ 250µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
100mOhm @ 2.2A, 10V
Supplier Device Package
8-SO