Infineon Technologies 94-2110

Product Details

Vgs(th) (Max) @ Id

2V @ 250µA

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

8.5mOhm @ 15A, 10V

Series

HEXFET®

Power Dissipation (Max)

88W (Tc)

FET Type

N-Channel

Supplier Device Package

D2PAK

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

35nC @ 4.5V

Vgs (Max)

±12V

Drain to Source Voltage (Vdss)

20V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

2410pF @ 10V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

77A (Tc)

Part Status

Obsolete

Drive Voltage (Max Rds On, Min Rds On)

2.8V, 10V

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB