Infineon Technologies 64-6006PBF

Product Details

Mounting Type

Through Hole

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

Vgs(th) (Max) @ Id

4V @ 250µA

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

480mOhm @ 4A, 10V

Series

HEXFET®

Power Dissipation (Max)

3.8W (Ta), 48W (Tc)

FET Type

P-Channel

Supplier Device Package

TO-262

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

27nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

100V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

350pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

6.8A (Tc)

Part Status

Obsolete

Drive Voltage (Max Rds On, Min Rds On)

10V