Images are for reference only. See Product Specifications for product details
Diodes Incorporated ZXMN10B08E6TA
MOSFET N-CH 100V 1.6A SOT23-6
- Manufacturer
- Diodes Incorporated
- Datasheet
- Price
- 0
- Stock
- 18843
Product Details
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 100V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 330pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 9.4A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Vgs(th) (Max) @ Id
- 4V @ 250µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 210mOhm @ 5.6A, 10V
- Series
- HEXFET®
- Power Dissipation (Max)
- 48W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- D-Pak
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 25nC @ 10V