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Diodes Incorporated DMTH6016LPSQ-13
MOSFET N-CHA 60V 10.6A POWERDI
- Manufacturer
- Diodes Incorporated
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 110nC @ 10V
- Vgs (Max)
- ±10V
- Drain to Source Voltage (Vdss)
- 20V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 2800pF @ 10V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- -
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 1.8V, 4.5V
- Mounting Type
- Surface Mount
- Package / Case
- 4-UFBGA, WLCSP
- Vgs(th) (Max) @ Id
- 900mV @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 23mOhm @ 2A, 4.5V
- Series
- TrenchFET®
- Power Dissipation (Max)
- 1.1W (Ta), 2.7W (Tc)
- FET Type
- P-Channel
- Supplier Device Package
- 4-WLCSP (1.6x1.6)