Diodes Incorporated DMTH43M8LPSQ-13

Product Details

Vgs(th) (Max) @ Id

2.45V @ 250µA

Operating Temperature

-40°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

2.7mOhm @ 27A, 10V

Series

HEXFET®

Power Dissipation (Max)

2.8W (Ta), 89W (Tc)

FET Type

N-Channel

Supplier Device Package

DIRECTFET™ MX

Packaging

Cut Tape (CT)

Gate Charge (Qg) (Max) @ Vgs

42nC @ 4.5V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

20V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

4130pF @ 10V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

27A (Ta), 150A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount

Package / Case

DirectFET™ Isometric MX