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Diodes Incorporated DMTH10H025SK3-13

MOSFET BVDSS: 61V-100V TO252 T&R

Manufacturer
Diodes Incorporated
Datasheet
Price
0.23
Stock
0

Product Details

Mounting Type
Surface Mount
Package / Case
8-PowerWDFN
Vgs(th) (Max) @ Id
3.5V @ 30µA
Operating Temperature
-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs
8.5mOhm @ 15A, 10V
Power Dissipation (Max)
3.1W (Ta), 38W (Tc)
Series
-
Supplier Device Package
8-WDFN (3.3x3.3)
FET Type
N-Channel
Gate Charge (Qg) (Max) @ Vgs
10nC @ 10V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
40V
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
625pF @ 25V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
14A (Ta), 48A (Tc)
Part Status
Active
Drive Voltage (Max Rds On, Min Rds On)
10V