Diodes Incorporated DMT10H010LPS-13

Product Details

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

2940pF @ 15V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

25A (Ta), 50A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount

Package / Case

8-PowerWDFN

Vgs(th) (Max) @ Id

2.8V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

6.2mOhm @ 20A, 10V

Series

-

Power Dissipation (Max)

6.25W (Ta), 83W (Tc)

FET Type

P-Channel

Supplier Device Package

8-DFN-EP (3.3x3.3)

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

51nC @ 10V

Vgs (Max)

±25V

Drain to Source Voltage (Vdss)

30V