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Diodes Incorporated DMT10H010LK3-13
MOSFET N-CH 100V 68.8A TO252
- Manufacturer
- Diodes Incorporated
- Datasheet
- Price
- 0
- Stock
- 1243
Product Details
- Series
- HEXFET®
- Power Dissipation (Max)
- 110W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- IPAK (TO-251)
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 38nC @ 10V
- Vgs (Max)
- ±30V
- Drain to Source Voltage (Vdss)
- 200V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 830pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 13A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Vgs(th) (Max) @ Id
- 5.5V @ 250µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 235mOhm @ 8A, 10V