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Diodes Incorporated DMN61D9UDW-7
MOSFET 2N-CH 60V 0.35A
- Manufacturer
- Diodes Incorporated
- Datasheet
- Price
- 0
- Stock
- 94309
Product Details
- Supplier Device Package
- SOT-666
- Series
- Automotive, AEC-Q101, TrenchMOS™
- Gate Charge (Qg) (Max) @ Vgs
- 0.68nC @ 4.5V
- FET Type
- N and P-Channel
- Drain to Source Voltage (Vdss)
- 30V
- Packaging
- Digi-Reel®
- Input Capacitance (Ciss) (Max) @ Vds
- 50pF @ 15V
- FET Feature
- Logic Level Gate
- Current - Continuous Drain (Id) @ 25°C
- 400mA, 220mA
- Part Status
- Active
- Power - Max
- 500mW
- Mounting Type
- Surface Mount
- Package / Case
- SOT-563, SOT-666
- Vgs(th) (Max) @ Id
- 1.1V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 1.4Ohm @ 350mA, 4.5V