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Diodes Incorporated DMN6070SY-13
MOSFET N-CH 60V 4.1A SOT89-3
- Manufacturer
- Diodes Incorporated
- Datasheet
- Price
- 0.12
- Stock
- 0
Product Details
- Rds On (Max) @ Id, Vgs
- 56mOhm @ 1A, 4.5V
- Series
- -
- Power Dissipation (Max)
- 710mW
- FET Type
- N-Channel
- Supplier Device Package
- X2-WLB0606-4
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 7.4nC @ 4.5V
- Vgs (Max)
- ±8V
- Drain to Source Voltage (Vdss)
- 20V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 540pF @ 10V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 3A (Ta)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 1.5V, 4.5V
- Mounting Type
- Surface Mount
- Package / Case
- 4-XFBGA, WLBGA
- Vgs(th) (Max) @ Id
- 1V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)