Images are for reference only. See Product Specifications for product details
Diodes Incorporated DMN4800LSSL-13
MOSFET N-CH 30V 8A 8-SO
- Manufacturer
- Diodes Incorporated
- Datasheet
- Price
- 0
- Stock
- 72
Product Details
- Series
- TrenchFET®
- Power Dissipation (Max)
- 780mW (Ta), 1.8W (Tc)
- FET Type
- P-Channel
- Supplier Device Package
- 4-Microfoot
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 27nC @ 10V
- Vgs (Max)
- ±12V
- Drain to Source Voltage (Vdss)
- 20V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 765pF @ 10V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- -
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 2.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- 4-UFBGA
- Vgs(th) (Max) @ Id
- 1.2V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 44mOhm @ 1.5A, 10V