Diodes Incorporated DMN4026SK3-13

Product Details

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

655pF @ 10V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

20A (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Mounting Type

Surface Mount

Package / Case

6-WDFN Exposed Pad

Vgs(th) (Max) @ Id

1.1V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

23.9mOhm @ 5A, 4.5V

Series

NexFET™

Power Dissipation (Max)

2.9W (Ta)

FET Type

P-Channel

Supplier Device Package

6-WSON (2x2)

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

4.7nC @ 4.5V

Vgs (Max)

±8V

Drain to Source Voltage (Vdss)

20V