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Diodes Incorporated DMN3010LFG-13
MOSFET N-CH 30V POWERDI3333-8
- Manufacturer
- Diodes Incorporated
- Datasheet
- Price
- 0.2
- Stock
- 0
Product Details
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 10nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 100V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 390pF @ 50V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 4A (Ta), 14A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Vgs(th) (Max) @ Id
- 2.9V @ 250µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 68mOhm @ 5A, 10V
- Series
- -
- Power Dissipation (Max)
- 2.5W (Ta), 30W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-252, (D-Pak)