Images are for reference only. See Product Specifications for product details
Diodes Incorporated DMN2320UFB4-7B
MOSFET N-CH 20V X2-DFN1006-3
- Manufacturer
- Diodes Incorporated
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 22A (Ta)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- 6-WDFN Exposed Pad
- Vgs(th) (Max) @ Id
- 1.9V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 15mOhm @ 5A, 10V
- Series
- NexFET™
- Power Dissipation (Max)
- 2.5W (Ta)
- FET Type
- N-Channel
- Supplier Device Package
- 6-SON (2x2)
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 6.7nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 20V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 419pF @ 10V