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Diodes Incorporated DMN2028USS-13
MOSFET N-CH 20V 7.3A 8SO
- Manufacturer
- Diodes Incorporated
- Datasheet
- Price
- 0
- Stock
- 2450
Product Details
- Series
- -
- Power Dissipation (Max)
- 1.2W (Ta)
- FET Type
- N-Channel
- Supplier Device Package
- TSOT-26
- Packaging
- Cut Tape (CT)
- Gate Charge (Qg) (Max) @ Vgs
- 9.7nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 100V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 1167pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 2.6A (Ta)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Vgs(th) (Max) @ Id
- 3V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 160mOhm @ 5A, 10V