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Diodes Incorporated DMN2005UFG-7
MOSFET N-CH 20V 18.1A POWERDI-8
- Manufacturer
- Diodes Incorporated
- Datasheet
- Price
- 0
- Stock
- 6000
Product Details
- Vgs(th) (Max) @ Id
- 1.4V @ 250µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 60mOhm @ 4.7A, 4.5V
- Series
- Automotive, AEC-Q101, TrenchFET®
- Power Dissipation (Max)
- 5W (Tc)
- FET Type
- P-Channel
- Supplier Device Package
- 6-TSOP
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 10.3nC @ 4.5V
- Vgs (Max)
- ±12V
- Drain to Source Voltage (Vdss)
- 20V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 840pF @ 10V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 7.4A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 2.5V, 4.5V
- Mounting Type
- Surface Mount
- Package / Case
- SOT-23-6 Thin, TSOT-23-6