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Diodes Incorporated DMN10H099SFG-7
MOSFET N-CH 100V 4.2A PWRDI3333
- Manufacturer
- Diodes Incorporated
- Datasheet
- Price
- 0
- Stock
- 1963
Product Details
- FET Type
- P-Channel
- Supplier Device Package
- TUMT3
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 5.2nC @ 4.5V
- Vgs (Max)
- ±12V
- Drain to Source Voltage (Vdss)
- 20V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 560pF @ 10V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 1.5A (Ta)
- Part Status
- Not For New Designs
- Drive Voltage (Max Rds On, Min Rds On)
- 2.5V, 4.5V
- Mounting Type
- Surface Mount
- Package / Case
- 3-SMD, Flat Leads
- Vgs(th) (Max) @ Id
- 2V @ 1mA
- Operating Temperature
- 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 135mOhm @ 1.5A, 4.5V
- Series
- -
- Power Dissipation (Max)
- 800mW (Ta)