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Diodes Incorporated DMN1032UCB4-7
MOSFET N-CH 12V 4.8A U-WLB1010-4
- Manufacturer
- Diodes Incorporated
- Datasheet
- Price
- 0
- Stock
- 8591
Product Details
- Series
- -
- Power Dissipation (Max)
- 40W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-252, (D-Pak)
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 7.7nC @ 4.5V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 30V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 680pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 50A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Vgs(th) (Max) @ Id
- 2.5V @ 250µA
- Operating Temperature
- 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 9mOhm @ 16A, 10V