Diodes Incorporated DMG3N60SJ3

Product Details

Vgs (Max)

±25V

Drain to Source Voltage (Vdss)

40V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

4234pF @ 20V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount

Package / Case

8-PowerTDFN

Vgs(th) (Max) @ Id

2.5V @ 250µA

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

10mOhm @ 9.8A, 10V

Series

-

Power Dissipation (Max)

2.6W (Ta)

FET Type

P-Channel

Supplier Device Package

PowerDI5060-8

Packaging

Tape & Reel (TR)

Gate Charge (Qg) (Max) @ Vgs

91nC @ 10V