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Diodes Incorporated DMC1029UFDB-7
MOSFET N/P-CH 12V 6UDFN
- Manufacturer
- Diodes Incorporated
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Rds On (Max) @ Id, Vgs
- 6.3mOhm @ 20A, 5V
- Supplier Device Package
- Die
- Series
- eGaN®
- Gate Charge (Qg) (Max) @ Vgs
- 7nC @ 5V
- FET Type
- 2 N-Channel (Half Bridge)
- Drain to Source Voltage (Vdss)
- 100V
- Packaging
- Tray
- Input Capacitance (Ciss) (Max) @ Vds
- 800pF @ 50V
- FET Feature
- GaNFET (Gallium Nitride)
- Current - Continuous Drain (Id) @ 25°C
- 23A
- Part Status
- Discontinued at Digi-Key
- Power - Max
- -
- Mounting Type
- Surface Mount
- Package / Case
- Die
- Vgs(th) (Max) @ Id
- 2.5V @ 5.5mA
- Operating Temperature
- -40°C ~ 150°C (TJ)