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Comchip Technology CDBJSC10650-G
DIODE SILICON CARBIDE POWER SCHO
- Manufacturer
- Comchip Technology
- Datasheet
- Price
- 4.59
- Stock
- 500
Product Details
- Reverse Recovery Time (trr)
- 0ns
- Current - Reverse Leakage @ Vr
- 200µA @ 1200V
- Voltage - DC Reverse (Vr) (Max)
- 1200V
- Speed
- No Recovery Time > 500mA (Io)
- Current - Average Rectified (Io)
- 21A (DC)
- Series
- Automotive, AEC-Q101
- Operating Temperature - Junction
- -55°C ~ 175°C
- Packaging
- Digi-Reel®
- Voltage - Forward (Vf) (Max) @ If
- 1.75V @ 10A
- Diode Type
- Silicon Carbide Schottky
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Capacitance @ Vr, F
- 612pF @ 1V, 100kHz
- Supplier Device Package
- D2PAK-3 (TO-263)